NSN 5961-00-007-7435 of Semiconductor Device Diode - Parts Details
Alternative NSN: 5961000077435 |
Item Name: Semiconductor Device Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 000077435 |
NCB Code: USA (00) |
Manufacturers: Riimic Llc , On Semiconductors , Electronic Industries Association , Lacon Electronic Gmbh , Adelco Elektronik Gmbh , Freescale Semiconductor Inc , Ultra Electronics Ltd , Bae Systems , Eads Deutschland Gmbh Verteidig , Landis And Gyr Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1003060005, 1N5343B, 1N5343BA, 28475A62387, 4854 4188-057 under NSN 5961-00-007-7435 of Semiconductor Device Diode manufactured by Riimic Llc, On Semiconductors, Electronic Industries Association, Lacon Electronic Gmbh, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-007-7435 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-007-7435, 5961000077435
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Part No Manufacturer Item Name QTY RFQ 1003060005 Riimic Llc semiconductor device diode Avl RFQ 1N5343B On Semiconductors semiconductor device diode Avl RFQ 1N5343B Electronic Industries Association semiconductor device diode Avl RFQ 1N5343B Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N5343B Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N5343B Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N5343BA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 28475A62387 Ultra Electronics Ltd semiconductor device diode Avl RFQ 4854 4188-057 Bae Systems semiconductor device diode Avl RFQ 5800583-926100-552 Eads Deutschland Gmbh Verteidig semiconductor device diode Avl RFQ 96020-272-7 Landis And Gyr Inc semiconductor device diode Avl RFQ RELEASE 5750 Electronic Industries Association semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961000077435MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.350 INCHES NOMINAL ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.145 INCHES NOMINAL AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0 TO 5.0 CTQX CURRENT RATING PER CHARACTERISTIC 175.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT CTRD POWER RATING PER CHARACTERISTIC 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE 5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.350 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.145 INCHES NOMINAL |
AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.5 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 175.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE 5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |