NSN 5961-00-052-1884 of Transistor - Parts Details
| Alternative NSN: 5961000521884 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 000521884 |
| NCB Code: USA (00) |
| Manufacturers: Texas Instrument Inc , Gilbert Engineering Co Inc Incon , Rohde And Schwarz Inc , Simmonds Precision Products Inc , British Sarozal Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TI494, T1244, 704982, 462118, 2N697 under NSN 5961-00-052-1884 of Transistor manufactured by Texas Instrument Inc, Gilbert Engineering Co Inc Incon, Rohde And Schwarz Inc, Simmonds Precision Products Inc, British Sarozal Ltd.
Federal Supply Class of NSN 5961-00-052-1884 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-052-1884, 5961000521884
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Part No Manufacturer Item Name QTY RFQ TI494 Texas Instrument Inc transistor Avl RFQ T1244 Gilbert Engineering Co Inc Incon transistor Avl RFQ 704982 Rohde And Schwarz Inc transistor Avl RFQ 462118 Simmonds Precision Products Inc transistor Avl RFQ 2N697 British Sarozal Ltd transistor Avl RFQ 2N697 Texas Instrument Inc transistor Avl RFQ
Characteristics Data of NSN 5961000521884MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.250 INCHES NOMINAL ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.359 INCHES NOMINAL ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR ASCQ INTERNAL JUNCTION CONFIGURATION PNP AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTRD POWER RATING PER CHARACTERISTIC 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.250 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.359 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PNP |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |