NSN 5961-00-057-7859 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961000577859 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 000577859 |
| NCB Code: USA (00) |
| Manufacturers: Diodes Inc , Cleveland Motion Controls Inc , Stsemicon Inc , Micro Uspd Inc , Electronic Industries Association , Raytheon Technical Services Company , L 3 Communications , Bae Systems , British Aerospace Inc , Rockwell Collins Inc , Ddc Pertec Peripherals Corp , Concurrent Computer Corporation , Adelco Elektronik Gmbh , Texas Instrument Inc , Fairchild Semiconductor Corp , Freescale Semiconductor Inc , Joint Electronics Type Designation Systemes , Itt Semiconductors Division , Autek Systems Corp , Engineered Electric Company |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ZS10B, X18-2445, VR10, UZ8710, RELEASE5009 under NSN 5961-00-057-7859 of Semiconductor Device Diode manufactured by Diodes Inc, Cleveland Motion Controls Inc, Stsemicon Inc, Micro Uspd Inc, Electronic Industries Association.
Federal Supply Class of NSN 5961-00-057-7859 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-057-7859, 5961000577859
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Part No Manufacturer Item Name QTY RFQ ZS10B Diodes Inc semiconductor device diode Avl RFQ X18-2445 Cleveland Motion Controls Inc semiconductor device diode Avl RFQ VR10 Stsemicon Inc semiconductor device diode Avl RFQ UZ8710 Micro Uspd Inc semiconductor device diode Avl RFQ RELEASE5009 Electronic Industries Association semiconductor device diode Avl RFQ 852198 Raytheon Technical Services Company semiconductor device diode Avl RFQ 852198 L 3 Communications semiconductor device diode Avl RFQ 419 1 65780 000 ITEM 073 Bae Systems semiconductor device diode Avl RFQ 419 1 65780 000 ITEM 073 British Aerospace Inc semiconductor device diode Avl RFQ 419 1 65780 000 073 British Aerospace Inc semiconductor device diode Avl RFQ 419 1 65780 000 073 Bae Systems semiconductor device diode Avl RFQ 41147-143-6 Bae Systems semiconductor device diode Avl RFQ 41147-143-6 British Aerospace Inc semiconductor device diode Avl RFQ 41147-143-00-6 Bae Systems semiconductor device diode Avl RFQ 41147-143-00-6 British Aerospace Inc semiconductor device diode Avl RFQ 353-6481-260 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-6481-250 Rockwell Collins Inc semiconductor device diode Avl RFQ 330-1005 Ddc Pertec Peripherals Corp semiconductor device diode Avl RFQ 26141-929-00-5 ITEM 073 British Aerospace Inc semiconductor device diode Avl RFQ 26141-929-00-5 ITEM 073 Bae Systems semiconductor device diode Avl RFQ 26141-929-00-5 073 Bae Systems semiconductor device diode Avl RFQ 26141-929-00-5 073 British Aerospace Inc semiconductor device diode Avl RFQ 23-003F00M00R00 Concurrent Computer Corporation semiconductor device diode Avl RFQ 1N4740AA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4740A Texas Instrument Inc semiconductor device diode Avl RFQ 1N4740A Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 1N4740A Electronic Industries Association semiconductor device diode Avl RFQ 1N4740A Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N4740 Joint Electronics Type Designation Systemes semiconductor device diode Avl RFQ 1N4740 Itt Semiconductors Division semiconductor device diode Avl RFQ 1N4740 Electronic Industries Association semiconductor device diode Avl RFQ 164-440 Autek Systems Corp semiconductor device diode Avl RFQ 106-0053 Engineered Electric Company semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961000577859MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.182 INCHES NOMINAL ABJT TERMINAL LENGTH 1.100 INCHES MINIMUM ADAV OVERALL DIAMETER 0.094 INCHES NOMINAL AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-41 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0 TO 5.0 CTQX CURRENT RATING PER CHARACTERISTIC 25.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.182 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.100 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.094 INCHES NOMINAL |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-41 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |