NSN 5961-00-062-0208 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961000620208 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 000620208 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Raytheon Aircraft , Thales Avionics , Spx Corp , Tdk Lambda Americas Inc , Wavetek U S Inc Div Of Wavetek Corp , Adelco Elektronik Gmbh , C O D I Corp , Freescale Semiconductor Inc , Gilbert Engineering Co Inc Incon , International Diode Corp , Ampex Data Systems Corporation , Silicon Graphics Inc , Slate Enterprises Inc , Microsemi Corporation , Telcom Semiconductor Inc , Trw Electronic Components Division , Trw Inc , Harris Corporation , Digitec Corp , Hekimian Laboratories Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE 3109, F00001-12, 99194385, 9005-4-1, 66003004 under NSN 5961-00-062-0208 of Semiconductor Device Diode manufactured by Electronic Industries Association, Raytheon Aircraft, Thales Avionics, Spx Corp, Tdk Lambda Americas Inc.
Federal Supply Class of NSN 5961-00-062-0208 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-062-0208, 5961000620208
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Part No Manufacturer Item Name QTY RFQ RELEASE 3109 Electronic Industries Association semiconductor device diode Avl RFQ F00001-12 Raytheon Aircraft semiconductor device diode Avl RFQ 99194385 Thales Avionics semiconductor device diode Avl RFQ 9005-4-1 Spx Corp semiconductor device diode Avl RFQ 66003004 Tdk Lambda Americas Inc semiconductor device diode Avl RFQ 530160-2 Raytheon Aircraft semiconductor device diode Avl RFQ 4801-01-0823 Wavetek U S Inc Div Of Wavetek Corp semiconductor device diode Avl RFQ 1N823AA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N823A C O D I Corp semiconductor device diode Avl RFQ 1N823A Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N823A Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N823A International Diode Corp semiconductor device diode Avl RFQ 1N823A Raytheon Aircraft semiconductor device diode Avl RFQ 1N823A Ampex Data Systems Corporation semiconductor device diode Avl RFQ 1N823A Silicon Graphics Inc semiconductor device diode Avl RFQ 1N823A Slate Enterprises Inc semiconductor device diode Avl RFQ 1N823A Microsemi Corporation semiconductor device diode Avl RFQ 1N823A Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N823A Trw Electronic Components Division semiconductor device diode Avl RFQ 1N823A Trw Inc semiconductor device diode Avl RFQ 1N823A Electronic Industries Association semiconductor device diode Avl RFQ 131034-001 Harris Corporation semiconductor device diode Avl RFQ 05010000 Digitec Corp semiconductor device diode Avl RFQ 03C00823A Hekimian Laboratories Inc semiconductor device diode Avl RFQ 013-625 Ampex Data Systems Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961000620208MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-7 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 7.50 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 7.50 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |