NSN 5961-00-103-3950 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961001033950 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001033950 |
| NCB Code: USA (00) |
| Manufacturers: Thomson Inc Div Grass Valley , Electronic Industries Association , Bei , Rockwell Collins Inc , Navair Ltd , Dynarad Corp , Hamilton Sundstrand Corporation , Adelco Elektronik Gmbh , Lacon Electronic Gmbh , General Electric Company , United Page Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SB3003-00, RELEASE5073, CR0361, 353-3652-030, 3207678 under NSN 5961-00-103-3950 of Semiconductor Device Diode manufactured by Thomson Inc Div Grass Valley, Electronic Industries Association, Bei, Rockwell Collins Inc, Navair Ltd.
Federal Supply Class of NSN 5961-00-103-3950 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-103-3950, 5961001033950
-
Part No Manufacturer Item Name QTY RFQ SB3003-00 Thomson Inc Div Grass Valley semiconductor device diode Avl RFQ RELEASE5073 Electronic Industries Association semiconductor device diode Avl RFQ CR0361 Bei semiconductor device diode Avl RFQ 353-3652-030 Rockwell Collins Inc semiconductor device diode Avl RFQ 3207678 Navair Ltd semiconductor device diode Avl RFQ 300007 Dynarad Corp semiconductor device diode Avl RFQ 26316027-14 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 1N4830A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4830A Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N4830 Electronic Industries Association semiconductor device diode Avl RFQ 1N4830 General Electric Company semiconductor device diode Avl RFQ 1N4830 United Page Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001033950MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5073 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5073 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |