NSN 5961-00-106-0673 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961001060673 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001060673 |
| NCB Code: USA (00) |
| Manufacturers: Hewlett Packard Co , Rycom Instruments , Raytheon Aircraft , General Dynamics Advanced Technology , Eads Deutschland Gmbh Verteidig , Avago Technologies Us Inc Division , Bae Systems , G E C Marconi Communications Ltd , Rockwell Collins Inc , Cipher Data Products Inc , Ultra Electronics Ltd , Paeaeesikunta Logistiikkaosasto |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TX-2835, RY3082, HP82-2835, 801491-2, 601132-1 under NSN 5961-00-106-0673 of Semiconductor Device Diode manufactured by Hewlett Packard Co, Rycom Instruments, Raytheon Aircraft, General Dynamics Advanced Technology, Eads Deutschland Gmbh Verteidig.
Federal Supply Class of NSN 5961-00-106-0673 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-106-0673, 5961001060673
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Part No Manufacturer Item Name QTY RFQ TX-2835 Hewlett Packard Co semiconductor device diode Avl RFQ RY3082 Rycom Instruments semiconductor device diode Avl RFQ HP82-2835 Hewlett Packard Co semiconductor device diode Avl RFQ 801491-2 Raytheon Aircraft semiconductor device diode Avl RFQ 601132-1 General Dynamics Advanced Technology semiconductor device diode Avl RFQ 601129-1 General Dynamics Advanced Technology semiconductor device diode Avl RFQ 5L.5532.004.62 Eads Deutschland Gmbh Verteidig semiconductor device diode Avl RFQ 5082-2835 Avago Technologies Us Inc Division semiconductor device diode Avl RFQ 5082-2835 Hewlett Packard Co semiconductor device diode Avl RFQ 415 4 02876 000 Bae Systems semiconductor device diode Avl RFQ 415 4 02876 000 G E C Marconi Communications Ltd semiconductor device diode Avl RFQ 353-3691-020 Rockwell Collins Inc semiconductor device diode Avl RFQ 202023 Cipher Data Products Inc semiconductor device diode Avl RFQ 201001 Ultra Electronics Ltd semiconductor device diode Avl RFQ 10133038 Paeaeesikunta Logistiikkaosasto semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001060673MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.160 INCHES NOMINAL ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.072 INCHES NOMINAL AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 0.3 MAXIMUM FORWARD VOLTAGE, AVERAGE CTQX CURRENT RATING PER CHARACTERISTIC 0.01 MICROAMPERES MAXIMUM REVERSE CURRENT, DC CTRD POWER RATING PER CHARACTERISTIC 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.160 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.072 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.3 MAXIMUM FORWARD VOLTAGE, AVERAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.01 MICROAMPERES MAXIMUM REVERSE CURRENT, DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |