NSN 5961-00-107-0618 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961001070618 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001070618 |
| NCB Code: USA (00) |
| Manufacturers: Gilbert Engineering Co Inc Incon , Semitronics Corp , Trw Electronic Components Division , Microsemi Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SV7534, SES278, PS35570, MC6938, DT771006G under NSN 5961-00-107-0618 of Semiconductor Device Diode manufactured by Gilbert Engineering Co Inc Incon, Semitronics Corp, Trw Electronic Components Division, Microsemi Corporation.
Federal Supply Class of NSN 5961-00-107-0618 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-107-0618, 5961001070618
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Part No Manufacturer Item Name QTY RFQ SV7534 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ SES278 Semitronics Corp semiconductor device diode Avl RFQ PS35570 Trw Electronic Components Division semiconductor device diode Avl RFQ MC6938 Microsemi Corporation semiconductor device diode Avl RFQ DT771006G Microsemi Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001070618MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.125 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.5 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 7.50 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.125 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.5 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 7.50 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |