NSN 5961-00-110-7429 of Transistor - Parts Details
Alternative NSN: 5961001107429 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 001107429 |
NCB Code: USA (00) |
Manufacturers: Electronic Industries Association , Rohde And Schwarz Inc , Thales Nederland , Thales Optronics Limited , Adelco Elektronik Gmbh , Freescale Semiconductor Inc , Lacon Electronic Gmbh , Robert Bosch Gmbh |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5458, AL0100349, 432208065050, 2N4399A, 2N4399 under NSN 5961-00-110-7429 of Transistor manufactured by Electronic Industries Association, Rohde And Schwarz Inc, Thales Nederland, Thales Optronics Limited, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-110-7429 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-110-7429, 5961001107429
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Part No Manufacturer Item Name QTY RFQ RELEASE5458 Electronic Industries Association transistor Avl RFQ AL0100349 Rohde And Schwarz Inc transistor Avl RFQ 432208065050 Thales Nederland transistor Avl RFQ 432208065050 Thales Optronics Limited transistor Avl RFQ 2N4399A Adelco Elektronik Gmbh transistor Avl RFQ 2N4399 Freescale Semiconductor Inc transistor Avl RFQ 2N4399 Lacon Electronic Gmbh transistor Avl RFQ 2N4399 Electronic Industries Association transistor Avl RFQ 2N4399 Adelco Elektronik Gmbh transistor Avl RFQ 1197345012 Robert Bosch Gmbh transistor Avl RFQ
Characteristics Data of NSN 5961001107429MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.450 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.875 INCHES MAXIMUM AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR ASCQ INTERNAL JUNCTION CONFIGURATION PNP AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN CTQX CURRENT RATING PER CHARACTERISTIC 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.50 AMPERES SOURCE CUTOFF CURRENT MINIMUM CTRD POWER RATING PER CHARACTERISTIC 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 1 CASE AND 2 PIN
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.450 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
ASCQ | INTERNAL JUNCTION CONFIGURATION | PNP |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 7.50 AMPERES SOURCE CUTOFF CURRENT MINIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |