NSN 5961-00-117-8198 of Transistor - Parts Details
Alternative NSN: 5961001178198 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 001178198 |
NCB Code: USA (00) |
Manufacturers: General Electric Company , Freescale Semiconductor Inc , On Semiconductors , Texas Instrument Inc , Fairchild Semiconductor Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers X10D1105, SM9754H, SM7547, S7260, 2W918 under NSN 5961-00-117-8198 of Transistor manufactured by General Electric Company, Freescale Semiconductor Inc, On Semiconductors, Texas Instrument Inc, Fairchild Semiconductor Corp.
Federal Supply Class of NSN 5961-00-117-8198 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-117-8198, 5961001178198
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Part No Manufacturer Item Name QTY RFQ X10D1105 General Electric Company transistor Avl RFQ SM9754H Freescale Semiconductor Inc transistor Avl RFQ SM9754H On Semiconductors transistor Avl RFQ SM7547 Texas Instrument Inc transistor Avl RFQ S7260 Fairchild Semiconductor Corp transistor Avl RFQ 2W918 Freescale Semiconductor Inc transistor Avl RFQ
Characteristics Data of NSN 5961001178198MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.187 INCHES NOMINAL ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.190 INCHES NOMINAL ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ASCQ INTERNAL JUNCTION CONFIGURATION NPN AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC CTRD POWER RATING PER CHARACTERISTIC 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.187 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.190 INCHES NOMINAL |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |