NSN 5961-00-146-8294 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961001468294 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001468294 |
| NCB Code: USA (00) |
| Manufacturers: Breezeeastern Corporation , Electronic Industries Association , Interstate Electronics Corporation , Veeco Instruments , Thales Avionics , Thales Vorm Thomsoncsf Elektronic , Nai Technologies Inc , Digital Development Corp , Ocean Applied Research Corp , Adelco Elektronik Gmbh , International Diode Corp , Lacon Electronic Gmbh , Microsemi Corporation , Burns Aerospace Corp , C O D I Corp , Freescale Semiconductor Inc , General Semiconductor Inc , International Rectifier Corporation , Semitronics Corp , Telcom Semiconductor Inc , On Semiconductors , Raytheon Technical Services Company , Honeywell Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers Y-1198-12-2, RELEASE5566, P00347350-062, FBM-Z140, 99095884 under NSN 5961-00-146-8294 of Semiconductor Device Diode manufactured by Breezeeastern Corporation, Electronic Industries Association, Interstate Electronics Corporation, Veeco Instruments, Thales Avionics.
Federal Supply Class of NSN 5961-00-146-8294 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-146-8294, 5961001468294
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Part No Manufacturer Item Name QTY RFQ Y-1198-12-2 Breezeeastern Corporation semiconductor device diode Avl RFQ RELEASE5566 Electronic Industries Association semiconductor device diode Avl RFQ P00347350-062 Interstate Electronics Corporation semiconductor device diode Avl RFQ FBM-Z140 Veeco Instruments semiconductor device diode Avl RFQ 99095884 Thales Avionics semiconductor device diode Avl RFQ 99095884 Thales Vorm Thomsoncsf Elektronic semiconductor device diode Avl RFQ 806958 Nai Technologies Inc semiconductor device diode Avl RFQ 54553-72 Digital Development Corp semiconductor device diode Avl RFQ 4803104-05234 Ocean Applied Research Corp semiconductor device diode Avl RFQ 1N5234BA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N5234B International Diode Corp semiconductor device diode Avl RFQ 1N5234B Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N5234B Microsemi Corporation semiconductor device diode Avl RFQ 1N5234B Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N5234B Burns Aerospace Corp semiconductor device diode Avl RFQ 1N5234B C O D I Corp semiconductor device diode Avl RFQ 1N5234B Electronic Industries Association semiconductor device diode Avl RFQ 1N5234B Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N5234B General Semiconductor Inc semiconductor device diode Avl RFQ 1N5234B International Rectifier Corporation semiconductor device diode Avl RFQ 1N5234B Semitronics Corp semiconductor device diode Avl RFQ 1N5234B Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N5234B On Semiconductors semiconductor device diode Avl RFQ 1N5234A Raytheon Technical Services Company semiconductor device diode Avl RFQ 14500027-005 Honeywell Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001468294MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION D0-7 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-43L3ASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | D0-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-43L3ASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |