NSN 5961-00-168-3488 of Transistor - Parts Details
Alternative NSN: 5961001683488 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 001683488 |
NCB Code: USA (00) |
Manufacturers: Gilbert Engineering Co Inc Incon , Freescale Semiconductor Inc , Electronic Industries Association , Bae Systems , Mbda Uk Ltd , Butler National Corp , Eads Deutschland Gmbh Verteidig , Mcdonnell Douglas Helicopter Co , Thales Uk Limited , Rockwell Collins Inc , Adelco Elektronik Gmbh , Microsemi Corporation , Semitronics Corp , Lacon Electronic Gmbh , Fairchild Semiconductor Corp , On Semiconductors , Solitron Devices Inc , Thales Communications Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ST66167, SJ2770H, RELEASE 5852, FS311-5000-100N, B83697 under NSN 5961-00-168-3488 of Transistor manufactured by Gilbert Engineering Co Inc Incon, Freescale Semiconductor Inc, Electronic Industries Association, Bae Systems, Mbda Uk Ltd.
Federal Supply Class of NSN 5961-00-168-3488 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-168-3488, 5961001683488
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Part No Manufacturer Item Name QTY RFQ ST66167 Gilbert Engineering Co Inc Incon transistor Avl RFQ SJ2770H Freescale Semiconductor Inc transistor Avl RFQ RELEASE 5852 Electronic Industries Association transistor Avl RFQ FS311-5000-100N Bae Systems transistor Avl RFQ B83697 Mbda Uk Ltd transistor Avl RFQ B106045-0000 Butler National Corp transistor Avl RFQ 5L5512-001-72 Eads Deutschland Gmbh Verteidig transistor Avl RFQ 4030003-1 Mcdonnell Douglas Helicopter Co transistor Avl RFQ 3A-A18899 Thales Uk Limited transistor Avl RFQ 352-1058-040 Rockwell Collins Inc transistor Avl RFQ 2N5430A Adelco Elektronik Gmbh transistor Avl RFQ 2N5430 Microsemi Corporation transistor Avl RFQ 2N5430 Freescale Semiconductor Inc transistor Avl RFQ 2N5430 Semitronics Corp transistor Avl RFQ 2N5430 Electronic Industries Association transistor Avl RFQ 2N5430 Lacon Electronic Gmbh transistor Avl RFQ 2N5430 Adelco Elektronik Gmbh transistor Avl RFQ 2N5430 Fairchild Semiconductor Corp transistor Avl RFQ 2N5430 On Semiconductors transistor Avl RFQ 2N5430 Solitron Devices Inc transistor Avl RFQ 134570-0000 Thales Communications Inc transistor Avl RFQ 106045-000000 Butler National Corp transistor Avl RFQ
Characteristics Data of NSN 5961001683488MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.340 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.620 INCHES MAXIMUM AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 1.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 7.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 228.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD AND 1 CASE
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.340 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 7.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 228.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |