NSN 5961-00-180-2857 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961001802857 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001802857 |
| NCB Code: USA (00) |
| Manufacturers: Telcom Semiconductor Inc , Freescale Semiconductor Inc , International Rectifier Corporation , Boeing Company |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TD41033, SZ51006, 69 7172, 27A10495-101-11 under NSN 5961-00-180-2857 of Semiconductor Device Diode manufactured by Telcom Semiconductor Inc, Freescale Semiconductor Inc, International Rectifier Corporation, Boeing Company.
Federal Supply Class of NSN 5961-00-180-2857 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-180-2857, 5961001802857
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Part No Manufacturer Item Name QTY RFQ TD41033 Telcom Semiconductor Inc semiconductor device diode Avl RFQ SZ51006 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 69 7172 International Rectifier Corporation semiconductor device diode Avl RFQ 27A10495-101-11 Boeing Company semiconductor device diode Avl RFQ 27A10495-101-11 International Rectifier Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001802857MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.107 INCHES MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-7 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.3 MAXIMUM BREAKDOWN VOLTAGE, DC CTQS VOLTAGE TOLERANCE IN PERCENT -5.0 TO 5.0 CTQX CURRENT RATING PER CHARACTERISTIC 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.3 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |