NSN 5961-00-181-0666 of Transistor - Parts Details
Alternative NSN: 5961001810666 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 001810666 |
NCB Code: USA (00) |
Manufacturers: Eads Deutschland Gmbh Verteidig , Raytheon Aircraft , Texas Instrument Inc , Thales Communications Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 5L.5501.001.06, 537407-1, 3N201, 0537407-0001, 048882-0001 under NSN 5961-00-181-0666 of Transistor manufactured by Eads Deutschland Gmbh Verteidig, Raytheon Aircraft, Texas Instrument Inc, Thales Communications Inc.
Federal Supply Class of NSN 5961-00-181-0666 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-181-0666, 5961001810666
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Part No Manufacturer Item Name QTY RFQ 5L.5501.001.06 Eads Deutschland Gmbh Verteidig transistor Avl RFQ 537407-1 Raytheon Aircraft transistor Avl RFQ 3N201 Texas Instrument Inc transistor Avl RFQ 0537407-0001 Raytheon Aircraft transistor Avl RFQ 048882-0001 Thales Communications Inc transistor Avl RFQ
Characteristics Data of NSN 5961001810666MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CRTL CRITICALITY CODE JUSTIFICATION FEAT CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION FEAT SPECIAL FEATURES WEAPONS SYSTEM ESSENTIAL TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE6130 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
FEAT | SPECIAL FEATURES | WEAPONS SYSTEM ESSENTIAL |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE6130 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |