NSN 5961-00-188-8680 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961001888680 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001888680 |
| NCB Code: USA (00) |
| Manufacturers: Edo Corporation , Adelco Elektronik Gmbh , Fairchild Semiconductor Corp , Freescale Semiconductor Inc , Lacon Electronic Gmbh , Microsemi Corporation , N A P Smd Technology Inc , Telcom Semiconductor Inc , Trw Electronic Components Division |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 395122-25, 1N970BA, 1N970B under NSN 5961-00-188-8680 of Semiconductor Device Diode manufactured by Edo Corporation, Adelco Elektronik Gmbh, Fairchild Semiconductor Corp, Freescale Semiconductor Inc, Lacon Electronic Gmbh.
Federal Supply Class of NSN 5961-00-188-8680 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-188-8680, 5961001888680
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Part No Manufacturer Item Name QTY RFQ 395122-25 Edo Corporation semiconductor device diode Avl RFQ 1N970BA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N970B Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N970B Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 1N970B Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N970B Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N970B Microsemi Corporation semiconductor device diode Avl RFQ 1N970B N A P Smd Technology Inc semiconductor device diode Avl RFQ 1N970B Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N970B Trw Electronic Components Division semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001888680MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.130 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 24.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE CTQX CURRENT RATING PER CHARACTERISTIC 5.20 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 24.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.20 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |