NSN 5961-00-211-2213 of Transistor - Parts Details
Alternative NSN: 5961002112213 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 002112213 |
NCB Code: USA (00) |
Manufacturers: Electronic Industries Association , Dla Land And Maritime , Joint Electronics Type Designation Systemes , Freescale Semiconductor Inc , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5716, DMS 89051B, 3N155A under NSN 5961-00-211-2213 of Transistor manufactured by Electronic Industries Association, Dla Land And Maritime, Joint Electronics Type Designation Systemes, Freescale Semiconductor Inc, Texas Instrument Inc.
Federal Supply Class of NSN 5961-00-211-2213 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-211-2213, 5961002112213
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Part No Manufacturer Item Name QTY RFQ RELEASE5716 Electronic Industries Association transistor Avl RFQ DMS 89051B Dla Land And Maritime transistor Avl RFQ 3N155A Joint Electronics Type Designation Systemes transistor Avl RFQ 3N155A Electronic Industries Association transistor Avl RFQ 3N155A Freescale Semiconductor Inc transistor Avl RFQ 3N155A Texas Instrument Inc transistor Avl RFQ
Characteristics Data of NSN 5961002112213MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 35.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU CTQX CURRENT RATING PER CHARACTERISTIC 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5716 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU |
CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5716 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |