NSN 5961-00-227-4079 of Transistor - Parts Details
| Alternative NSN: 5961002274079 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 002274079 |
| NCB Code: USA (00) |
| Manufacturers: Wayne Kerr Electronics Inc , Siliconix Incorporated Div Silic , Bae Systems , Ge Aviation Systems Llc , Adelco Elektronik Gmbh , Solitron Devices Inc , Texas Instrument Inc , Freescale Semiconductor Inc , Telcom Semiconductor Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VF4391, U222, 430189-01, 40-666-731, 2N4391A under NSN 5961-00-227-4079 of Transistor manufactured by Wayne Kerr Electronics Inc, Siliconix Incorporated Div Silic, Bae Systems, Ge Aviation Systems Llc, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-227-4079 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-227-4079, 5961002274079
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Part No Manufacturer Item Name QTY RFQ VF4391 Wayne Kerr Electronics Inc transistor Avl RFQ U222 Siliconix Incorporated Div Silic transistor Avl RFQ 430189-01 Bae Systems transistor Avl RFQ 40-666-731 Ge Aviation Systems Llc transistor Avl RFQ 2N4391A Adelco Elektronik Gmbh transistor Avl RFQ 2N4391 Solitron Devices Inc transistor Avl RFQ 2N4391 Texas Instrument Inc transistor Avl RFQ 2N4391 Freescale Semiconductor Inc transistor Avl RFQ 2N4391 Siliconix Incorporated Div Silic transistor Avl RFQ 2N4391 Adelco Elektronik Gmbh transistor Avl RFQ 2N4391 Telcom Semiconductor Inc transistor Avl RFQ
Characteristics Data of NSN 5961002274079MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-18 ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |