NSN 5961-00-255-3472 of Semiconductor Devices Unitized - Parts Details
| Alternative NSN: 5961002553472 |
| Item Name: Semiconductor Devices Unitized |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 002553472 |
| NCB Code: USA (00) |
| Manufacturers: Texas Instrument Inc , Electronic Industries Association , Raytheon Aircraft , Fairchild Semiconductor Corp , On Semiconductors , Semiconductor Technology Inc , Telcom Semiconductor Inc , Freescale Semiconductor Inc , E And R Electronics Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SSC6879, RELEASE4815, 539010-5, 2N3424, 2601-0250 under NSN 5961-00-255-3472 of Semiconductor Devices Unitized manufactured by Texas Instrument Inc, Electronic Industries Association, Raytheon Aircraft, Fairchild Semiconductor Corp, On Semiconductors.
Federal Supply Class of NSN 5961-00-255-3472 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-255-3472, 5961002553472
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Part No Manufacturer Item Name QTY RFQ SSC6879 Texas Instrument Inc semiconductor devices unitized Avl RFQ RELEASE4815 Electronic Industries Association semiconductor devices unitized Avl RFQ 539010-5 Raytheon Aircraft semiconductor devices unitized Avl RFQ 2N3424 Electronic Industries Association semiconductor devices unitized Avl RFQ 2N3424 Fairchild Semiconductor Corp semiconductor devices unitized Avl RFQ 2N3424 On Semiconductors semiconductor devices unitized Avl RFQ 2N3424 Semiconductor Technology Inc semiconductor devices unitized Avl RFQ 2N3424 Telcom Semiconductor Inc semiconductor devices unitized Avl RFQ 2N3424 Freescale Semiconductor Inc semiconductor devices unitized Avl RFQ 2601-0250 E And R Electronics Inc semiconductor devices unitized Avl RFQ
Characteristics Data of NSN 5961002553472MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL AND GLASS ABHP OVERALL LENGTH 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES NOMINAL ADAV OVERALL DIAMETER 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-76 ASKA COMPONENT NAME AND QUANTITY 2 TRANSISTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN ALL TRANSISTOR CTQX CURRENT RATING PER CHARACTERISTIC 25.00 NANOAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET ALL TRANSISTOR CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR CTRK TRANSFER RATIO 120.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION FEAT SPECIAL FEATURES ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN PMLC PRECIOUS MATERIAL AND LOCATION TERMINAL SURFACES GOLD PRMT PRECIOUS MATERIAL GOLD TTQY TERMINAL TYPE AND QUANTITY 6 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL AND GLASS |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-76 |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR AND 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 NANOAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR |
| CTRK | TRANSFER RATIO | 120.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |