NSN 5961-00-278-9632 of Transistor - Parts Details
| Alternative NSN: 5961002789632 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 002789632 |
| NCB Code: USA (00) |
| Manufacturers: Bae Systems , Freescale Semiconductor Inc , National Semiconductor Corp , Siliconix Incorporated Div Silic , Solitron Devices Inc , Telcom Semiconductor Inc , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 429597-01, 2N4091 under NSN 5961-00-278-9632 of Transistor manufactured by Bae Systems, Freescale Semiconductor Inc, National Semiconductor Corp, Siliconix Incorporated Div Silic, Solitron Devices Inc.
Federal Supply Class of NSN 5961-00-278-9632 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-278-9632, 5961002789632
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Part No Manufacturer Item Name QTY RFQ 429597-01 Bae Systems transistor Avl RFQ 2N4091 Freescale Semiconductor Inc transistor Avl RFQ 2N4091 National Semiconductor Corp transistor Avl RFQ 2N4091 Siliconix Incorporated Div Silic transistor Avl RFQ 2N4091 Solitron Devices Inc transistor Avl RFQ 2N4091 Telcom Semiconductor Inc transistor Avl RFQ 2N4091 Texas Instrument Inc transistor Avl RFQ
Characteristics Data of NSN 5961002789632MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |