NSN 5961-00-294-9397 of Transistor - Parts Details
Alternative NSN: 5961002949397 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 002949397 |
NCB Code: USA (00) |
Manufacturers: Solitron Devices Inc , Telcom Semiconductor Inc , General Dynamics Canada Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2N4093, 905460-1 under NSN 5961-00-294-9397 of Transistor manufactured by Solitron Devices Inc, Telcom Semiconductor Inc, General Dynamics Canada Ltd.
Federal Supply Class of NSN 5961-00-294-9397 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-294-9397, 5961002949397
Characteristics Data of NSN 5961002949397MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR ASCQ INTERNAL JUNCTION CONFIGURATION NP AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 1.8 WATTS MAXIMUM COLLECTOR POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
ASCQ | INTERNAL JUNCTION CONFIGURATION | NP |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |