NSN 5961-00-355-9580 of Semiconductor Device Diode - Parts Details
Alternative NSN: 5961003559580 |
Item Name: Semiconductor Device Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 003559580 |
NCB Code: USA (00) |
Manufacturers: Fairchild Semiconductor Corp , Philips Electronics North America , Vishay Dale Electronics Inc , Mullard Inc , Thales Training And Simulation Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers BZY88C3V9, BZY88-C3V9, 965487 under NSN 5961-00-355-9580 of Semiconductor Device Diode manufactured by Fairchild Semiconductor Corp, Philips Electronics North America, Vishay Dale Electronics Inc, Mullard Inc, Thales Training And Simulation Inc.
Federal Supply Class of NSN 5961-00-355-9580 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-355-9580, 5961003559580
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Part No Manufacturer Item Name QTY RFQ BZY88C3V9 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ BZY88C3V9 Philips Electronics North America semiconductor device diode Avl RFQ BZY88C3V9 Vishay Dale Electronics Inc semiconductor device diode Avl RFQ BZY88-C3V9 Mullard Inc semiconductor device diode Avl RFQ 965487 Thales Training And Simulation Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961003559580MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.107 INCHES MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION D0-7 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 5.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | D0-7 |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |