NSN 5961-00-410-3835 of Transistor - Parts Details
Alternative NSN: 5961004103835 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 004103835 |
NCB Code: USA (00) |
Manufacturers: Telcom Semiconductor Inc , Dla Land And Maritime , Adelco Elektronik Gmbh , Lacon Electronic Gmbh |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers U2289, DMS 77025B, 2N4092A, 2N4092 under NSN 5961-00-410-3835 of Transistor manufactured by Telcom Semiconductor Inc, Dla Land And Maritime, Adelco Elektronik Gmbh, Lacon Electronic Gmbh.
Federal Supply Class of NSN 5961-00-410-3835 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-410-3835, 5961004103835
Characteristics Data of NSN 5961004103835MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 50.0 MAXIMUM DRAIN TO GATE VOLTAGE CTRD POWER RATING PER CHARACTERISTIC 1.8 WATTS MAXIMUM COLLECTOR POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM DRAIN TO GATE VOLTAGE |
CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |