NSN 5961-00-435-3725 of Semiconductor Devices Unitized - Parts Details
| Alternative NSN: 5961004353725 |
| Item Name: Semiconductor Devices Unitized |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004353725 |
| NCB Code: USA (00) |
| Manufacturers: Fairchild Semiconductor Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2N4066 under NSN 5961-00-435-3725 of Semiconductor Devices Unitized manufactured by Fairchild Semiconductor Corp.
Federal Supply Class of NSN 5961-00-435-3725 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-435-3725, 5961004353725
Characteristics Data of NSN 5961004353725MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL CTRD POWER RATING PER CHARACTERISTIC 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION ADAV OVERALL DIAMETER 0.370 INCHES MAXIMUM ABHP OVERALL LENGTH 0.260 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5275 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION CTQX CURRENT RATING PER CHARACTERISTIC 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-76 AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL ASKA COMPONENT NAME AND QUANTITY 2 TRANSISTOR TTQY TERMINAL TYPE AND QUANTITY 8 UNINSULATED WIRE LEAD CTMZ SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5275 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-76 |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |