NSN 5961-00-437-6393 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961004376393 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004376393 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Interstate Electronics Corporation , Raytheon Aircraft , Motorola Inc , Rockwell Collins Inc , Adelco Elektronik Gmbh , Burns Aerospace Corp , C O D I Corp , Lacon Electronic Gmbh , Microsemi Corporation , Freescale Semiconductor Inc , General Semiconductor Inc , International Diode Corp , International Rectifier Corporation , Telcom Semiconductor Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5566, P00347350-047, 588101-6, 48D82256C03, 353-3713-100 under NSN 5961-00-437-6393 of Semiconductor Device Diode manufactured by Electronic Industries Association, Interstate Electronics Corporation, Raytheon Aircraft, Motorola Inc, Rockwell Collins Inc.
Federal Supply Class of NSN 5961-00-437-6393 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-437-6393, 5961004376393
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Part No Manufacturer Item Name QTY RFQ RELEASE5566 Electronic Industries Association semiconductor device diode Avl RFQ P00347350-047 Interstate Electronics Corporation semiconductor device diode Avl RFQ 588101-6 Raytheon Aircraft semiconductor device diode Avl RFQ 48D82256C03 Motorola Inc semiconductor device diode Avl RFQ 353-3713-100 Rockwell Collins Inc semiconductor device diode Avl RFQ 1N5230BA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N5230B Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N5230B Burns Aerospace Corp semiconductor device diode Avl RFQ 1N5230B C O D I Corp semiconductor device diode Avl RFQ 1N5230B Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N5230B Microsemi Corporation semiconductor device diode Avl RFQ 1N5230B Electronic Industries Association semiconductor device diode Avl RFQ 1N5230B Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N5230B General Semiconductor Inc semiconductor device diode Avl RFQ 1N5230B International Diode Corp semiconductor device diode Avl RFQ 1N5230B International Rectifier Corporation semiconductor device diode Avl RFQ 1N5230B Telcom Semiconductor Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961004376393MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DA-7 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 4.7 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 20.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DA-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.7 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |