NSN 5961-00-454-3380 of Transistor - Parts Details
| Alternative NSN: 5961004543380 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004543380 |
| NCB Code: USA (00) |
| Manufacturers: Telcom Semiconductor Inc , Solitron Devices Inc , Siliconix Incorporated Div Silic , Mcdonnell Douglas Helicopter Co , Rohde And Schwarz Inc , Adelco Elektronik Gmbh , Lacon Electronic Gmbh |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers U1869, B87T0006-1, AM0108785, 2N3972A, 2N3972 under NSN 5961-00-454-3380 of Transistor manufactured by Telcom Semiconductor Inc, Solitron Devices Inc, Siliconix Incorporated Div Silic, Mcdonnell Douglas Helicopter Co, Rohde And Schwarz Inc.
Federal Supply Class of NSN 5961-00-454-3380 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-454-3380, 5961004543380
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Part No Manufacturer Item Name QTY RFQ U1869 Telcom Semiconductor Inc transistor Avl RFQ B87T0006-1 Solitron Devices Inc transistor Avl RFQ B87T0006-1 Siliconix Incorporated Div Silic transistor Avl RFQ B87T0006-1 Mcdonnell Douglas Helicopter Co transistor Avl RFQ AM0108785 Rohde And Schwarz Inc transistor Avl RFQ 2N3972A Adelco Elektronik Gmbh transistor Avl RFQ 2N3972 Adelco Elektronik Gmbh transistor Avl RFQ 2N3972 Lacon Electronic Gmbh transistor Avl RFQ 2N3972 Siliconix Incorporated Div Silic transistor Avl RFQ 2N3972 Solitron Devices Inc transistor Avl RFQ
Characteristics Data of NSN 5961004543380MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM DRAIN TO GATE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |