NSN 5961-00-454-6864 of Transistor - Parts Details
Alternative NSN: 5961004546864 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 004546864 |
NCB Code: USA (00) |
Manufacturers: Crystalonics Inc , Electronic Industries Association , Solitron Devices Inc , Siliconix Incorporated Div Silic , Telcom Semiconductor Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2N4448, 2N444B, FN1782, RELEASE5516, U243 under NSN 5961-00-454-6864 of Transistor manufactured by Crystalonics Inc, Electronic Industries Association, Solitron Devices Inc, Siliconix Incorporated Div Silic, Telcom Semiconductor Inc.
Federal Supply Class of NSN 5961-00-454-6864 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-454-6864, 5961004546864
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Part No Manufacturer Item Name QTY RFQ 2N4448 Crystalonics Inc transistor Avl RFQ 2N4448 Electronic Industries Association transistor Avl RFQ 2N444B Solitron Devices Inc transistor Avl RFQ FN1782 Siliconix Incorporated Div Silic transistor Avl RFQ RELEASE5516 Electronic Industries Association transistor Avl RFQ U243 Siliconix Incorporated Div Silic transistor Avl RFQ U243 Telcom Semiconductor Inc transistor Avl RFQ
Characteristics Data of NSN 5961004546864MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.085 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 100.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5516 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.085 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5516 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |