NSN 5961-00-465-4405 of Semiconductor Device Diode - Parts Details
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers W41292F6200B6, VA70-0064-1, U169H101X5, RELEASE4190, MS1902 under NSN 5961-00-465-4405 of Semiconductor Device Diode manufactured by Eads Deutschland Gmbh Verteidig, Selex Galileo Ltd, Siemens Schweiz Ag, Electronic Industries Association, Msi Electronics Inc.
Federal Supply Class of NSN 5961-00-465-4405 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-465-4405, 5961004654405
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Part No Manufacturer Item Name QTY RFQ W41292F6200B6 Eads Deutschland Gmbh Verteidig semiconductor device diode Avl RFQ VA70-0064-1 Selex Galileo Ltd semiconductor device diode Avl RFQ U169H101X5 Siemens Schweiz Ag semiconductor device diode Avl RFQ RELEASE4190 Electronic Industries Association semiconductor device diode Avl RFQ MS1902 Msi Electronics Inc semiconductor device diode Avl RFQ IN4005 Semiconductor Components Industrial semiconductor device diode Avl RFQ FBL-00-050 Veeco Instruments semiconductor device diode Avl RFQ EM4005 Itt Semiconductors Division semiconductor device diode Avl RFQ A13M2 General Electric Company semiconductor device diode Avl RFQ 720680-28 Raytheon Aircraft semiconductor device diode Avl RFQ 67A7A5-1 Navair Ltd semiconductor device diode Avl RFQ 580-041 Ampex Data Systems Corporation semiconductor device diode Avl RFQ 422-4498 Paeaeesikunta Logistiikkaosasto semiconductor device diode Avl RFQ 353-6442-050 Rockwell Collins Inc semiconductor device diode Avl RFQ 276-1004 Radioshack Com L P semiconductor device diode Avl RFQ 22B4-114-43N-P1 Ellis And Watts International Llc semiconductor device diode Avl RFQ 210014 Eads North America Inc semiconductor device diode Avl RFQ 2088787-0010 Honeywell International Inc semiconductor device diode Avl RFQ 1N445A Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N4005G Semiconductor Components Industrial semiconductor device diode Avl RFQ 1N4005A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4005 International Rectifier Corporation semiconductor device diode Avl RFQ 1N4005 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N4005 Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4005 Microsemi Corporation semiconductor device diode Avl RFQ 1N4005 Electronic Industries Association semiconductor device diode Avl RFQ 1N4005 Electronic Transistors Corp semiconductor device diode Avl RFQ 1N4005 Tyco Electronics semiconductor device diode Avl RFQ 1N4005 Texas Instrument Inc semiconductor device diode Avl RFQ 1N4005 Motorola Solutions Inc Us Fe semiconductor device diode Avl RFQ 1N4005 Solitron Devices Inc semiconductor device diode Avl RFQ 1N4005 N A P Smd Technology Inc semiconductor device diode Avl RFQ 1N4005 Itt Semiconductors Division semiconductor device diode Avl RFQ 1N4005 Lacon Electronic Gmbh semiconductor device diode Avl RFQ 159-01-02 Mcgeoch Technology Ltd semiconductor device diode Avl RFQ 12042-0041 Honeywell International Inc semiconductor device diode Avl RFQ 12042-0031 Honeywell International Inc semiconductor device diode Avl RFQ 11-10967-00 Compaq Federal Llc semiconductor device diode Avl RFQ 101450 Symmetricom Inc semiconductor device diode Avl RFQ 007K6045-00 Selex Galileo Ltd semiconductor device diode Avl RFQ 007-6047-00 Honeywell International Inc semiconductor device diode Avl RFQ 007-06047-0000 Honeywell International Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961004654405MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.188 INCHES NOMINAL ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.094 INCHES NOMINAL AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 600.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 1.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.188 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.094 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |