NSN 5961-00-468-8427 of Semiconductor Devices Unitized - Parts Details
Alternative NSN: 5961004688427 |
Item Name: Semiconductor Devices Unitized |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 004688427 |
NCB Code: USA (00) |
Manufacturers: Epcos Ag , Epcos Ag Abt Pr Roe K Pm , Monsanto Co , General Instrument Corp , Rohde And Schwarz Inc , Hubbell Harvey Inc , North Hills Signal Processing Co , Thales Nederland , Compro Computer Services Inc Us , Sagem Telecommunications , Sfim Industries , Kepco Inc , Cae Inc , Honeywell International Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers Q62703-Q23-F97, Q2118, MCT2 Q2118, MCT2, BP0119656 under NSN 5961-00-468-8427 of Semiconductor Devices Unitized manufactured by Epcos Ag, Epcos Ag Abt Pr Roe K Pm, Monsanto Co, General Instrument Corp, Rohde And Schwarz Inc.
Federal Supply Class of NSN 5961-00-468-8427 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-468-8427, 5961004688427
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Part No Manufacturer Item Name QTY RFQ Q62703-Q23-F97 Epcos Ag semiconductor devices unitized Avl RFQ Q62703-Q23-F97 Epcos Ag Abt Pr Roe K Pm semiconductor devices unitized Avl RFQ Q2118 Monsanto Co semiconductor devices unitized Avl RFQ MCT2 Q2118 General Instrument Corp semiconductor devices unitized Avl RFQ MCT2 Monsanto Co semiconductor devices unitized Avl RFQ BP0119656 Rohde And Schwarz Inc semiconductor devices unitized Avl RFQ 908-0002 Hubbell Harvey Inc semiconductor devices unitized Avl RFQ 534-00-2 North Hills Signal Processing Co semiconductor devices unitized Avl RFQ 352250019753 Thales Nederland semiconductor devices unitized Avl RFQ 252-101012-001 Compro Computer Services Inc Us semiconductor devices unitized Avl RFQ 147-20001-158 Sagem Telecommunications semiconductor devices unitized Avl RFQ 147-20001-158 Sfim Industries semiconductor devices unitized Avl RFQ 119-0106 Kepco Inc semiconductor devices unitized Avl RFQ 104-462 Cae Inc semiconductor devices unitized Avl RFQ 10062432-101 Honeywell International Inc semiconductor devices unitized Avl RFQ
Characteristics Data of NSN 5961004688427MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.340 INCHES NOMINAL ABKW OVERALL HEIGHT 0.120 INCHES NOMINAL ABMK OVERALL WIDTH 0.250 INCHES NOMINAL ASKA COMPONENT NAME AND QUANTITY 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE CTMZ SEMICONDUCTOR MATERIAL SILICON SINGLE TRANSISTOR CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 3.0 MAXIMUM REVERSE VOLTAGE, DC SINGLE LIGHT EMITTING DIODE CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN SINGLE TRANSISTOR AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER TO COLLECTOR, BASE OPEN SINGLE TRANSISTOR CTQX CURRENT RATING PER CHARACTERISTIC 60.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MAXIMUM SINGLE LIGHT EMITTING DIODE AND 3.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL SINGLE LIGHT EMITTING DIODE CTRD POWER RATING PER CHARACTERISTIC 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE SINGLE LIGHT EMITTING DIODE CTRD POWER RATING PER CHARACTERISTIC 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE SINGLE TRANSISTOR CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100.0 DEG CELSIUS AMBIENT AIR FEAT SPECIAL FEATURES PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN PMLC PRECIOUS MATERIAL AND LOCATION PLATED LEADS OPTION SILVER TEST TEST DATA DOCUMENT 30003-247AS-C1848 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING TTQY TERMINAL TYPE AND QUANTITY 6 PIN
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 0.340 INCHES NOMINAL |
ABKW | OVERALL HEIGHT | 0.120 INCHES NOMINAL |
ABMK | OVERALL WIDTH | 0.250 INCHES NOMINAL |
ASKA | COMPONENT NAME AND QUANTITY | 1 LIGHT EMITTING DIODE AND 1 TRANSISTOR |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON SINGLE TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM REVERSE VOLTAGE, DC SINGLE LIGHT EMITTING DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN SINGLE TRANSISTOR AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER TO COLLECTOR, BASE OPEN SINGLE TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MAXIMUM SINGLE LIGHT EMITTING DIODE AND 3.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL SINGLE LIGHT EMITTING DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE SINGLE LIGHT EMITTING DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE SINGLE TRANSISTOR |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
FEAT | SPECIAL FEATURES | PHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN |
PMLC | PRECIOUS MATERIAL AND LOCATION | PLATED LEADS OPTION SILVER |
TEST | TEST DATA DOCUMENT | 30003-247AS-C1848 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING |
TTQY | TERMINAL TYPE AND QUANTITY | 6 PIN |