NSN 5961-00-469-9929 of Semiconductor Device Diode - Parts Details
Alternative NSN: 5961004699929 |
Item Name: Semiconductor Device Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 004699929 |
NCB Code: USA (00) |
Manufacturers: United Technologies Corporation , Rockwell Collins Inc , Adelco Elektronik Gmbh , Arrow Electronics Inc , Boeing Company , Gilbert Engineering Co Inc Incon , L 3 Communications , Freescale Semiconductor Inc , Hall Mark Electronics Corp , International Rectifier Corporation , N A P Smd Technology Inc , Telcom Semiconductor Inc , Texas Instrument Inc , Trw Electronic Components Division |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers A-ORM2-A, 353-2702-001, 1N747AA, 1N747A under NSN 5961-00-469-9929 of Semiconductor Device Diode manufactured by United Technologies Corporation, Rockwell Collins Inc, Adelco Elektronik Gmbh, Arrow Electronics Inc, Boeing Company.
Federal Supply Class of NSN 5961-00-469-9929 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-469-9929, 5961004699929
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Part No Manufacturer Item Name QTY RFQ A-ORM2-A United Technologies Corporation semiconductor device diode Avl RFQ 353-2702-001 Rockwell Collins Inc semiconductor device diode Avl RFQ 1N747AA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N747A Arrow Electronics Inc semiconductor device diode Avl RFQ 1N747A Boeing Company semiconductor device diode Avl RFQ 1N747A Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N747A L 3 Communications semiconductor device diode Avl RFQ 1N747A Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N747A Hall Mark Electronics Corp semiconductor device diode Avl RFQ 1N747A International Rectifier Corporation semiconductor device diode Avl RFQ 1N747A N A P Smd Technology Inc semiconductor device diode Avl RFQ 1N747A Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N747A Texas Instrument Inc semiconductor device diode Avl RFQ 1N747A Trw Electronic Components Division semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961004699929MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.150 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 3.6 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 20.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.150 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.6 MAXIMUM NOMINAL REGULATOR VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |