NSN 5961-00-476-4589 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961004764589 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004764589 |
| NCB Code: USA (00) |
| Manufacturers: Semitronics Corp , Telcom Semiconductor Inc , Microsemi Corporation , Sprague Electric Co World Hqs |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SES506, CD12372, 260P20504T24 under NSN 5961-00-476-4589 of Semiconductor Device Diode manufactured by Semitronics Corp, Telcom Semiconductor Inc, Microsemi Corporation, Sprague Electric Co World Hqs.
Federal Supply Class of NSN 5961-00-476-4589 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-476-4589, 5961004764589
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Part No Manufacturer Item Name QTY RFQ SES506 Semitronics Corp semiconductor device diode Avl RFQ CD12372 Telcom Semiconductor Inc semiconductor device diode Avl RFQ CD12372 Microsemi Corporation semiconductor device diode Avl RFQ 260P20504T24 Sprague Electric Co World Hqs semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961004764589MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES NOMINAL ADAV OVERALL DIAMETER 0.107 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 125.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 200.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |