NSN 5961-00-479-1401 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961004791401 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004791401 |
| NCB Code: USA (00) |
| Manufacturers: Rockwell Collins Inc , Adelco Elektronik Gmbh , Trw Electronic Components Division , Telcom Semiconductor Inc , Gilbert Engineering Co Inc Incon , L 3 Communications , Lacon Electronic Gmbh , Raytheon Aircraft , Raytheon Technical Services Company |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 353-0204-001, 1N457A, 1N457 under NSN 5961-00-479-1401 of Semiconductor Device Diode manufactured by Rockwell Collins Inc, Adelco Elektronik Gmbh, Trw Electronic Components Division, Telcom Semiconductor Inc, Gilbert Engineering Co Inc Incon.
Federal Supply Class of NSN 5961-00-479-1401 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-479-1401, 5961004791401
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Part No Manufacturer Item Name QTY RFQ 353-0204-001 Rockwell Collins Inc semiconductor device diode Avl RFQ 1N457A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N457 Trw Electronic Components Division semiconductor device diode Avl RFQ 1N457 Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N457 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N457 L 3 Communications semiconductor device diode Avl RFQ 1N457 Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N457 Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N457 Raytheon Aircraft semiconductor device diode Avl RFQ 1N457 Raytheon Technical Services Company semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961004791401MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES NOMINAL ADAV OVERALL DIAMETER 0.125 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 70.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 20.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET CTRD POWER RATING PER CHARACTERISTIC 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.125 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |