NSN 5961-00-490-7299 of Transistor - Parts Details
Alternative NSN: 5961004907299 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 004907299 |
NCB Code: USA (00) |
Manufacturers: Oerlikon Buehrle Ag Werkzeugmaschinenfabrik , Epcos Ag , Epcos Ag Abt Pr Roe K Pm , Rheinmetall Soldier Electronics Gmbh , Rohde And Schwarz Inc , Selex Communications Gmbh , Thales Electronic Systems Gmbh , Paeaeesikunta Logistiikkaosasto , Tadiran Ltd , Adelco Elektronik Gmbh , General Semiconductor Inc , National Semiconductor Corp , Fairchild Semiconductor Corp , Freescale Semiconductor Inc , Texas Instrument Inc , Trw Electronic Components Division , Aim Infrarot Module Gmbh , Philips Semiconductors Inc , Sprague Electric Co World Hqs , Te Connectivity |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers W5051586MS, Q62702-S122, Q 5 3175 2157, AK0105405, 6L.5512.280.00-009730 under NSN 5961-00-490-7299 of Transistor manufactured by Oerlikon Buehrle Ag Werkzeugmaschinenfabrik, Epcos Ag, Epcos Ag Abt Pr Roe K Pm, Rheinmetall Soldier Electronics Gmbh, Rohde And Schwarz Inc.
Federal Supply Class of NSN 5961-00-490-7299 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-490-7299, 5961004907299
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Part No Manufacturer Item Name QTY RFQ W5051586MS Oerlikon Buehrle Ag Werkzeugmaschinenfabrik transistor Avl RFQ Q62702-S122 Epcos Ag transistor Avl RFQ Q62702-S122 Epcos Ag Abt Pr Roe K Pm transistor Avl RFQ Q 5 3175 2157 Rheinmetall Soldier Electronics Gmbh transistor Avl RFQ AK0105405 Rohde And Schwarz Inc transistor Avl RFQ 6L.5512.280.00-009730 Selex Communications Gmbh transistor Avl RFQ 44541 00050 Thales Electronic Systems Gmbh transistor Avl RFQ 425-2680 Paeaeesikunta Logistiikkaosasto transistor Avl RFQ 40210005700 Tadiran Ltd transistor Avl RFQ 2N2222AA Adelco Elektronik Gmbh transistor Avl RFQ 2N2222A Epcos Ag transistor Avl RFQ 2N2222A Epcos Ag Abt Pr Roe K Pm transistor Avl RFQ 2N2222A General Semiconductor Inc transistor Avl RFQ 2N2222A National Semiconductor Corp transistor Avl RFQ 2N2222A Fairchild Semiconductor Corp transistor Avl RFQ 2N2222A Freescale Semiconductor Inc transistor Avl RFQ 2N2222A Texas Instrument Inc transistor Avl RFQ 2N2222A Trw Electronic Components Division transistor Avl RFQ 2N2222A Aim Infrarot Module Gmbh transistor Avl RFQ 2N2222A Philips Semiconductors Inc transistor Avl RFQ 2N2222A Sprague Electric Co World Hqs transistor Avl RFQ 011 4123 128854 Te Connectivity transistor Avl RFQ
Characteristics Data of NSN 5961004907299MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.188 INCHES NOMINAL ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.220 INCHES NOMINAL ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 800.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.188 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.220 INCHES NOMINAL |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 800.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |