NSN 5961-00-496-9311 of Transistor - Parts Details
Alternative NSN: 5961004969311 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 004969311 |
NCB Code: USA (00) |
Manufacturers: Electronic Industries Association , Csr Industries Inc , Burns Aerospace Corp , Intersil Corporation , Microsemi Corporation , National Semiconductor Corp , Siliconix Incorporated Div Silic , Solitron Devices Inc , Telcom Semiconductor Inc , Textron Systems Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE4584, 2N3070, 17-13389-1 under NSN 5961-00-496-9311 of Transistor manufactured by Electronic Industries Association, Csr Industries Inc, Burns Aerospace Corp, Intersil Corporation, Microsemi Corporation.
Federal Supply Class of NSN 5961-00-496-9311 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-496-9311, 5961004969311
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Part No Manufacturer Item Name QTY RFQ RELEASE4584 Electronic Industries Association transistor Avl RFQ 2N3070 Csr Industries Inc transistor Avl RFQ 2N3070 Burns Aerospace Corp transistor Avl RFQ 2N3070 Electronic Industries Association transistor Avl RFQ 2N3070 Intersil Corporation transistor Avl RFQ 2N3070 Microsemi Corporation transistor Avl RFQ 2N3070 National Semiconductor Corp transistor Avl RFQ 2N3070 Siliconix Incorporated Div Silic transistor Avl RFQ 2N3070 Solitron Devices Inc transistor Avl RFQ 2N3070 Telcom Semiconductor Inc transistor Avl RFQ 17-13389-1 Textron Systems Corporation transistor Avl RFQ
Characteristics Data of NSN 5961004969311MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 100.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 350.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE4584 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE4584 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |