NSN 5961-00-556-9314 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961005569314 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 005569314 |
| NCB Code: USA (00) |
| Manufacturers: Texas Instrument Inc , Rockwell Collins Inc , Itt Cannon , L 3 Communications , Raytheon Aircraft , Freescale Semiconductor Inc , Telcom Semiconductor Inc , Trw Electronic Components Division , Gilbert Engineering Co Inc Incon , International Rectifier Corporation , Navair Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 653C9, 353-2720-00, 353-2543-000, 1N756A, 1555288-2 under NSN 5961-00-556-9314 of Semiconductor Device Diode manufactured by Texas Instrument Inc, Rockwell Collins Inc, Itt Cannon, L 3 Communications, Raytheon Aircraft.
Federal Supply Class of NSN 5961-00-556-9314 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-556-9314, 5961005569314
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Part No Manufacturer Item Name QTY RFQ 653C9 Texas Instrument Inc semiconductor device diode Avl RFQ 353-2720-00 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-2543-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 1N756A Itt Cannon semiconductor device diode Avl RFQ 1N756A L 3 Communications semiconductor device diode Avl RFQ 1N756A Raytheon Aircraft semiconductor device diode Avl RFQ 1N756A Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N756A Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N756A Trw Electronic Components Division semiconductor device diode Avl RFQ 1N756A Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N756A International Rectifier Corporation semiconductor device diode Avl RFQ 1555288-2 Navair Ltd semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961005569314MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.210 INCHES NOMINAL ABKW OVERALL HEIGHT 0.210 INCHES NOMINAL ABMK OVERALL WIDTH 0.135 INCHES NOMINAL AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 8.4 MAXIMUM BREAKDOWN VOLTAGE, DC CTQX CURRENT RATING PER CHARACTERISTIC 60.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET AND 0.10 MICROAMPERES FORWARD CURRENT, AVERAGE MAJOR CTRD POWER RATING PER CHARACTERISTIC 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.210 INCHES NOMINAL |
| ABKW | OVERALL HEIGHT | 0.210 INCHES NOMINAL |
| ABMK | OVERALL WIDTH | 0.135 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 8.4 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET AND 0.10 MICROAMPERES FORWARD CURRENT, AVERAGE MAJOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |