NSN 5961-00-587-4712 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961005874712 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 005874712 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Adelco Elektronik Gmbh , Lacon Electronic Gmbh , At And T Corp , Microsemi Corporation , American Telephone And Telegraph , Fairchild Semiconductor Corp , Interstate Electronics Corporation , L 3 Communications , Raytheon Service Co Logistics Su |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE3453, 1N3065A, 1N3065 under NSN 5961-00-587-4712 of Semiconductor Device Diode manufactured by Electronic Industries Association, Adelco Elektronik Gmbh, Lacon Electronic Gmbh, At And T Corp, Microsemi Corporation.
Federal Supply Class of NSN 5961-00-587-4712 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-587-4712, 5961005874712
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Part No Manufacturer Item Name QTY RFQ RELEASE3453 Electronic Industries Association semiconductor device diode Avl RFQ 1N3065A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N3065A Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N3065 At And T Corp semiconductor device diode Avl RFQ 1N3065 Electronic Industries Association semiconductor device diode Avl RFQ 1N3065 Microsemi Corporation semiconductor device diode Avl RFQ 1N3065 American Telephone And Telegraph semiconductor device diode Avl RFQ 1N3065 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 1N3065 Interstate Electronics Corporation semiconductor device diode Avl RFQ 1N3065 L 3 Communications semiconductor device diode Avl RFQ 1N3065 Raytheon Service Co Logistics Su semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961005874712MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-7 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 75.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 0.10 MILLIAMPERES FORWARD CURRENT, AVERAGE PEAK CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE3453 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.10 MILLIAMPERES FORWARD CURRENT, AVERAGE PEAK |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE3453 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |