NSN 5961-00-617-6025 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961006176025 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 006176025 |
| NCB Code: USA (00) |
| Manufacturers: Raytheon Aircraft , Texas Instrument Inc , Navair Ltd , General Dynamics C4 Systems Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 650C3, 1683927, 13-100589-8 under NSN 5961-00-617-6025 of Semiconductor Device Diode manufactured by Raytheon Aircraft, Texas Instrument Inc, Navair Ltd, General Dynamics C4 Systems Inc.
Federal Supply Class of NSN 5961-00-617-6025 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-617-6025, 5961006176025
Characteristics Data of NSN 5961006176025MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.220 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.210 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 4.0 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 0.10 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK CTRD POWER RATING PER CHARACTERISTIC 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET PMLC PRECIOUS MATERIAL AND LOCATION LEAD SURFACE GOLD PRMT PRECIOUS MATERIAL GOLD TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.220 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.10 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| PMLC | PRECIOUS MATERIAL AND LOCATION | LEAD SURFACE GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |