NSN 5961-00-626-1808 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961006261808 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 006261808 |
| NCB Code: USA (00) |
| Manufacturers: Semi General Inc , Cober Electronics Inc , Hewlett Packard Co , Avago Technologies Us Inc Division , Thales Vorm Thomsoncsf Elektronic , E2v Inc , Thales Avionics , Racal Communications Systems Ltd , Thales Uk Limited , Eads Deutschland Gmbh Verteidig , Thales Communications Inc , British Aerospace Holdings Inc , Selex Galileo Ltd , Target Corp , Thales Optronics Limited , Paeaeesikunta Logistiikkaosasto , Thales Systemes Aeroportes Sa |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers UX5082-3077, MA47066, HP5082-3077, DH403B, 99114753 under NSN 5961-00-626-1808 of Semiconductor Device Diode manufactured by Semi General Inc, Cober Electronics Inc, Hewlett Packard Co, Avago Technologies Us Inc Division, Thales Vorm Thomsoncsf Elektronic.
Federal Supply Class of NSN 5961-00-626-1808 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-626-1808, 5961006261808
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Part No Manufacturer Item Name QTY RFQ UX5082-3077 Semi General Inc semiconductor device diode Avl RFQ MA47066 Cober Electronics Inc semiconductor device diode Avl RFQ HP5082-3077 Hewlett Packard Co semiconductor device diode Avl RFQ HP5082-3077 Avago Technologies Us Inc Division semiconductor device diode Avl RFQ DH403B Thales Vorm Thomsoncsf Elektronic semiconductor device diode Avl RFQ DH403B E2v Inc semiconductor device diode Avl RFQ 99114753 Thales Avionics semiconductor device diode Avl RFQ 935588 Racal Communications Systems Ltd semiconductor device diode Avl RFQ 935588 Thales Uk Limited semiconductor device diode Avl RFQ 5L.5534.001.36 Eads Deutschland Gmbh Verteidig semiconductor device diode Avl RFQ 5082-3077 Avago Technologies Us Inc Division semiconductor device diode Avl RFQ 5082-3077 Hewlett Packard Co semiconductor device diode Avl RFQ 486311 Thales Communications Inc semiconductor device diode Avl RFQ 415 4 05660 British Aerospace Holdings Inc semiconductor device diode Avl RFQ 415 4 05660 Selex Galileo Ltd semiconductor device diode Avl RFQ 404123 Target Corp semiconductor device diode Avl RFQ 3511 013 72731 Thales Optronics Limited semiconductor device diode Avl RFQ 3077 Hewlett Packard Co semiconductor device diode Avl RFQ 246242-0001 Thales Communications Inc semiconductor device diode Avl RFQ 10070656 Paeaeesikunta Logistiikkaosasto semiconductor device diode Avl RFQ 01416462 Thales Systemes Aeroportes Sa semiconductor device diode Avl RFQ 01416462 Thales Vorm Thomsoncsf Elektronic semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961006261808MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.170 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.076 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MAXIMUM BREAKDOWN VOLTAGE, DC CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.170 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.076 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |