NSN 5961-00-669-6884 of Semiconductor Device Diode - Parts Details
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VBE890 1N277, QG24, P5214C, L2088470-5, HD2934 under NSN 5961-00-669-6884 of Semiconductor Device Diode manufactured by Thales Nederland, Nautel Limited, Trw Electronic Components Division, Honeywell International Inc, L 3 Communications.
Federal Supply Class of NSN 5961-00-669-6884 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-669-6884, 5961006696884
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Part No Manufacturer Item Name QTY RFQ VBE890 1N277 Thales Nederland semiconductor device diode Avl RFQ QG24 Nautel Limited semiconductor device diode Avl RFQ P5214C Trw Electronic Components Division semiconductor device diode Avl RFQ L2088470-5 Honeywell International Inc semiconductor device diode Avl RFQ HD2934 L 3 Communications semiconductor device diode Avl RFQ HD2196 L 3 Communications semiconductor device diode Avl RFQ DR305 Scomill Inc semiconductor device diode Avl RFQ A850416G1 Superior Electric Holding Group semiconductor device diode Avl RFQ A7328 Aeronautical Communications Equipment Inc semiconductor device diode Avl RFQ 8826285 Picatinny Arsenal semiconductor device diode Avl RFQ 848045-0001 Thales Communications Inc semiconductor device diode Avl RFQ 842946 Navair Ltd semiconductor device diode Avl RFQ 7450-0018-001 Antenna Products Corporation semiconductor device diode Avl RFQ 5961PL1277741 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 57-1309-3 Drs Power And Control Technologies semiconductor device diode Avl RFQ 5-115665 Simpson Electric Company semiconductor device diode Avl RFQ 4178600-230 Raytheon Aircraft semiconductor device diode Avl RFQ 416497-1 Raytheon Aircraft semiconductor device diode Avl RFQ 353-2023-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-2011-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-2011-00 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-0097-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-0097-00 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-0011-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 352250009895 Thales Nederland semiconductor device diode Avl RFQ 322-1091P1 Raytheon Aircraft semiconductor device diode Avl RFQ 322-1058P1 Raytheon Aircraft semiconductor device diode Avl RFQ 322-1024P2 Raytheon Aircraft semiconductor device diode Avl RFQ 322-1024P1 Raytheon Aircraft semiconductor device diode Avl RFQ 322-1021P1 Raytheon Aircraft semiconductor device diode Avl RFQ 312-00-000A Logetronics Corporation semiconductor device diode Avl RFQ 312-00-000 Egoltronics Corporation semiconductor device diode Avl RFQ 312-00-000 Logetronics Corporation semiconductor device diode Avl RFQ 244311 Gould Instrument Systems Inc semiconductor device diode Avl RFQ 21N277 Sylvania Electric Products Inc semiconductor device diode Avl RFQ 2088470-5 Honeywell International Inc semiconductor device diode Avl RFQ 2056412-0701 Raytheon Aircraft semiconductor device diode Avl RFQ 1N87 Electronic Industries Association semiconductor device diode Avl RFQ 1N67A Electronic Industries Association semiconductor device diode Avl RFQ 1N51 General Semiconductor Inc semiconductor device diode Avl RFQ 1N44 Navy Electronics Supply Office semiconductor device diode Avl RFQ 1N281 General Semiconductor Inc semiconductor device diode Avl RFQ 1N279 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N277A Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N277 Electronic Industries Association semiconductor device diode Avl RFQ 1N126A Itt Cannon semiconductor device diode Avl RFQ 1N126A Tusonix Inc semiconductor device diode Avl RFQ 1N118A Electronic Industries Association semiconductor device diode Avl RFQ 1N118 Electronic Industries Association semiconductor device diode Avl RFQ 1N116 L 3 Communications semiconductor device diode Avl RFQ 1N116 Sylvania Electric Products Inc semiconductor device diode Avl RFQ 150342 Fluke Corporation semiconductor device diode Avl RFQ 137-800 General Instrument Corp semiconductor device diode Avl RFQ 101615 Rca Corp semiconductor device diode Avl RFQ 10-43-002 Crest Ultrasonics Corp semiconductor device diode Avl RFQ 1-913005-1 Eaton Corp semiconductor device diode Avl RFQ 074-20017-015 Graphic Controls Llc semiconductor device diode Avl RFQ 007T-6023-00 Selex Galileo Ltd semiconductor device diode Avl RFQ 007T-5023-00 Selex Galileo Ltd semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961006696884MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL GERMANIUM CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 270.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 75.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | GERMANIUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 270.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 75.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/201 GOVERNMENT SPECIFICATION |