NSN 5961-00-710-2780 of Transistor - Parts Details
| Alternative NSN: 5961007102780 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 007102780 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Syntar Industries Inc , Gpd Global Inc , New Jersey Semiconductor , Rockwell Collins Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE2750, 2N636A, 124-2719-00 under NSN 5961-00-710-2780 of Transistor manufactured by Electronic Industries Association, Syntar Industries Inc, Gpd Global Inc, New Jersey Semiconductor, Rockwell Collins Inc.
Federal Supply Class of NSN 5961-00-710-2780 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-710-2780, 5961007102780
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Part No Manufacturer Item Name QTY RFQ RELEASE2750 Electronic Industries Association transistor Avl RFQ 2N636A Electronic Industries Association transistor Avl RFQ 2N636A Syntar Industries Inc transistor Avl RFQ 2N636A Gpd Global Inc transistor Avl RFQ 2N636A New Jersey Semiconductor transistor Avl RFQ 124-2719-00 Rockwell Collins Inc transistor Avl RFQ
Characteristics Data of NSN 5961007102780MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.235 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.370 INCHES MAXIMUM ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTRD POWER RATING PER CHARACTERISTIC 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ALAS INTERNAL CONFIGURATION JUNCTION CONTACT AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL GERMANIUM CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 300.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 6.00 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.235 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | GERMANIUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 300.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 6.00 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |