NSN 5961-00-781-2636 of Transistor - Parts Details
| Alternative NSN: 5961007812636 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 007812636 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Plath Gmbh , Texas Instrument Inc , British Sarozal Ltd , Rs Components Limited , Moseley Associates Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5103, 505-121, 2N3820, 294-390, 2744-3630167 under NSN 5961-00-781-2636 of Transistor manufactured by Electronic Industries Association, Plath Gmbh, Texas Instrument Inc, British Sarozal Ltd, Rs Components Limited.
Federal Supply Class of NSN 5961-00-781-2636 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-781-2636, 5961007812636
-
Part No Manufacturer Item Name QTY RFQ RELEASE5103 Electronic Industries Association transistor Avl RFQ 505-121 Plath Gmbh transistor Avl RFQ 2N3820 Texas Instrument Inc transistor Avl RFQ 2N3820 British Sarozal Ltd transistor Avl RFQ 2N3820 Electronic Industries Association transistor Avl RFQ 294-390 Rs Components Limited transistor Avl RFQ 2744-3630167 Moseley Associates Inc transistor Avl RFQ
Characteristics Data of NSN 5961007812636MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.188 INCHES NOMINAL ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.188 INCHES NOMINAL ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CCDG OVERALL WIDTH ACROSS FLATS 0.141 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU CTRD POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5103 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.188 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.188 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.141 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU |
| CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5103 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |