NSN 5961-00-784-0647 of Transistor - Parts Details
| Alternative NSN: 5961007840647 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 007840647 |
| NCB Code: USA (00) |
| Manufacturers: Westinghouse Electric Corp , Sundstrand Corp , Hamilton Sundstrand Corporation , Honeywell International Inc , Allied Signal Inc , Eaton Aerospace Ltd , General Electric Company , Gilbert Engineering Co Inc Incon , Raytheon Aircraft , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 906D928-11, 819794-4, 503 4 04384 011, 2N657 under NSN 5961-00-784-0647 of Transistor manufactured by Westinghouse Electric Corp, Sundstrand Corp, Hamilton Sundstrand Corporation, Honeywell International Inc, Allied Signal Inc.
Federal Supply Class of NSN 5961-00-784-0647 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-784-0647, 5961007840647
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Part No Manufacturer Item Name QTY RFQ 906D928-11 Westinghouse Electric Corp transistor Avl RFQ 906D928-11 Sundstrand Corp transistor Avl RFQ 906D928-11 Hamilton Sundstrand Corporation transistor Avl RFQ 819794-4 Honeywell International Inc transistor Avl RFQ 819794-4 Allied Signal Inc transistor Avl RFQ 503 4 04384 011 Eaton Aerospace Ltd transistor Avl RFQ 2N657 General Electric Company transistor Avl RFQ 2N657 Gilbert Engineering Co Inc Incon transistor Avl RFQ 2N657 Raytheon Aircraft transistor Avl RFQ 2N657 Texas Instrument Inc transistor Avl RFQ
Characteristics Data of NSN 5961007840647MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.260 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.370 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ASCQ INTERNAL JUNCTION CONFIGURATION NPN AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTRD POWER RATING PER CHARACTERISTIC 4.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 4.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |