NSN 5961-00-791-3655 of Transistor - Parts Details
| Alternative NSN: 5961007913655 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 007913655 |
| NCB Code: USA (00) |
| Manufacturers: G E C Marconi Communications Ltd , Selex Elsag Ltd , Kay Elemetrics Corporation , Diamond Electronics Inc , Intersil Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers YD405012-01, K193, 847102-0030, 40235 under NSN 5961-00-791-3655 of Transistor manufactured by G E C Marconi Communications Ltd, Selex Elsag Ltd, Kay Elemetrics Corporation, Diamond Electronics Inc, Intersil Corporation.
Federal Supply Class of NSN 5961-00-791-3655 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-791-3655, 5961007913655
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Part No Manufacturer Item Name QTY RFQ YD405012-01 G E C Marconi Communications Ltd transistor Avl RFQ YD405012-01 Selex Elsag Ltd transistor Avl RFQ K193 Kay Elemetrics Corporation transistor Avl RFQ 847102-0030 Diamond Electronics Inc transistor Avl RFQ 40235 Intersil Corporation transistor Avl RFQ
Characteristics Data of NSN 5961007913655MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ASCQ INTERNAL JUNCTION CONFIGURATION NPN AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTRD POWER RATING PER CHARACTERISTIC 180.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTRD | POWER RATING PER CHARACTERISTIC | 180.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |