NSN 5961-00-811-8372 of Semiconductor Device Diode - Parts Details
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VBE408-91, USN1N3189, RX0R18-8S, RELEASE4862, JAN1N3189 under NSN 5961-00-811-8372 of Semiconductor Device Diode manufactured by Thales Nederland, Freescale Semiconductor Inc, Itt Cannon, Electronic Industries Association, Gilbert Engineering Co Inc Incon.
Federal Supply Class of NSN 5961-00-811-8372 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-811-8372, 5961008118372
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Part No Manufacturer Item Name QTY RFQ VBE408-91 Thales Nederland semiconductor device diode Avl RFQ USN1N3189 Freescale Semiconductor Inc semiconductor device diode Avl RFQ RX0R18-8S Itt Cannon semiconductor device diode Avl RFQ RELEASE4862 Electronic Industries Association semiconductor device diode Avl RFQ JAN1N3189 Freescale Semiconductor Inc semiconductor device diode Avl RFQ IN3073 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ CER67A Solitron Devices Inc semiconductor device diode Avl RFQ C95-5282 Andrea Systems Llc semiconductor device diode Avl RFQ A96P General Electric Company semiconductor device diode Avl RFQ 947179-1890 Litton Systems Inc semiconductor device diode Avl RFQ 5961008118372 Eca Etablissement Central Des semiconductor device diode Avl RFQ 4178600-148 Raytheon Aircraft semiconductor device diode Avl RFQ 353-3295-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-3258-000 Alcatel Usa Inc Div Wtpg semiconductor device diode Avl RFQ 352250017444 Thales Nederland semiconductor device diode Avl RFQ 343-212-008 Interstate Electronics Corporation semiconductor device diode Avl RFQ 2579454-101 Honeywell International Inc semiconductor device diode Avl RFQ 1N3253 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N3253 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N3253 Intersil Corporation semiconductor device diode Avl RFQ 1N3193 State Health Services Texas Depa semiconductor device diode Avl RFQ 1N3193 Electronic Industries Association semiconductor device diode Avl RFQ 1N3189A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N3189 General Electric Company semiconductor device diode Avl RFQ 1N2860 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N2860 International Diode Corp semiconductor device diode Avl RFQ 1N2860 Stsemicon Inc semiconductor device diode Avl RFQ 1N2860 International Rectifier Corporation semiconductor device diode Avl RFQ 1N2860 Solid State Devices Inc semiconductor device diode Avl RFQ 1N2860 Semicon Components Inc semiconductor device diode Avl RFQ 1N2860 Intersil Corporation semiconductor device diode Avl RFQ 1N2860 Electronic Transistors Corp semiconductor device diode Avl RFQ 1N2860 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 1N2860 Itt Semiconductors Division semiconductor device diode Avl RFQ 1N2860 Erie Specialty Products Inc semiconductor device diode Avl RFQ 1N2860 Bradley Semiconductor Corp semiconductor device diode Avl RFQ 1N2859A Electronic Industries Association semiconductor device diode Avl RFQ 1N2859A Intersil Corporation semiconductor device diode Avl RFQ 1N2859 Rca Corp semiconductor device diode Avl RFQ 1N2859 Intersil Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961008118372MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.350 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.195 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE CATHODE AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS CTQX CURRENT RATING PER CHARACTERISTIC 500.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/155 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.195 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/155 GOVERNMENT SPECIFICATION |