NSN 5961-00-824-5219 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961008245219 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008245219 |
| NCB Code: USA (00) |
| Manufacturers: Thales Nederland , Thales Optronics Limited , Dne Technologies Inc , Sapa Operaciones Sl , Adelco Elektronik Gmbh , Electronic Industries Association , General Electric Company , Lacon Electronic Gmbh , Philips Semiconductors Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 432208062050, 40020411-000, 27031000330, 1N4150A, 1N4150 under NSN 5961-00-824-5219 of Semiconductor Device Diode manufactured by Thales Nederland, Thales Optronics Limited, Dne Technologies Inc, Sapa Operaciones Sl, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-824-5219 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-824-5219, 5961008245219
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Part No Manufacturer Item Name QTY RFQ 432208062050 Thales Nederland semiconductor device diode Avl RFQ 432208062050 Thales Optronics Limited semiconductor device diode Avl RFQ 40020411-000 Dne Technologies Inc semiconductor device diode Avl RFQ 27031000330 Sapa Operaciones Sl semiconductor device diode Avl RFQ 1N4150A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4150 Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4150 Electronic Industries Association semiconductor device diode Avl RFQ 1N4150 General Electric Company semiconductor device diode Avl RFQ 1N4150 Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N4150 Philips Semiconductors Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961008245219MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 50.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 200.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE4150 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE4150 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |