NSN 5961-00-827-4565 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961008274565 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008274565 |
| NCB Code: USA (00) |
| Manufacturers: Gilbert Engineering Co Inc Incon , Itt Semiconductors Division , Texas Instrument Inc , Microsemi Corporation , Hybrid Memory Products Ltd , Fairchild Semiconductor Corp , Bae Systems , Semitronics Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SG9191, SG5351, S522, PG349, MC8484 under NSN 5961-00-827-4565 of Semiconductor Device Diode manufactured by Gilbert Engineering Co Inc Incon, Itt Semiconductors Division, Texas Instrument Inc, Microsemi Corporation, Hybrid Memory Products Ltd.
Federal Supply Class of NSN 5961-00-827-4565 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-827-4565, 5961008274565
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Part No Manufacturer Item Name QTY RFQ SG9191 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ SG5351 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ S522 Itt Semiconductors Division semiconductor device diode Avl RFQ PG349 Texas Instrument Inc semiconductor device diode Avl RFQ MC8484 Microsemi Corporation semiconductor device diode Avl RFQ HSE4606 Hybrid Memory Products Ltd semiconductor device diode Avl RFQ FD6166 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 8001100001 Bae Systems semiconductor device diode Avl RFQ 8001100001 Semitronics Corp semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961008274565MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.200 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.090 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 CTQX CURRENT RATING PER CHARACTERISTIC 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT HORSEPOWER METRIC |