NSN 5961-00-828-0723 of Transistor - Parts Details
| Alternative NSN: 5961008280723 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008280723 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Bei , Thomson Multimedia Broadcast Sol , Pultz John M Co Inc , L 3 Communications , Dage Mti Inc , Cohu Inc , Digital Development Corp , Eip Microwave Inc , Thales Communications Inc , Solitron Devices Inc , Texas Instrument Inc , Fairchild Semiconductor Corp , Freescale Semiconductor Inc , National Semiconductor Corp , Csr Industries Inc , Microsemi Ppc Inc , Solid State Devices Inc , Biotek Instruments Inc Dba Biotek , Chauvin Arnoux |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5306, Q0236, P58-005708-009, 854540, 733001-02 under NSN 5961-00-828-0723 of Transistor manufactured by Electronic Industries Association, Bei, Thomson Multimedia Broadcast Sol, Pultz John M Co Inc, L 3 Communications.
Federal Supply Class of NSN 5961-00-828-0723 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-828-0723, 5961008280723
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Part No Manufacturer Item Name QTY RFQ RELEASE5306 Electronic Industries Association transistor Avl RFQ Q0236 Bei transistor Avl RFQ P58-005708-009 Thomson Multimedia Broadcast Sol transistor Avl RFQ P58-005708-009 Pultz John M Co Inc transistor Avl RFQ 854540 L 3 Communications transistor Avl RFQ 733001-02 Dage Mti Inc transistor Avl RFQ 7210072-003 Cohu Inc transistor Avl RFQ 54731-32 Digital Development Corp transistor Avl RFQ 4704126-00 Eip Microwave Inc transistor Avl RFQ 31508 Thales Communications Inc transistor Avl RFQ 2N4126 Solitron Devices Inc transistor Avl RFQ 2N4126 Texas Instrument Inc transistor Avl RFQ 2N4126 Electronic Industries Association transistor Avl RFQ 2N4126 Fairchild Semiconductor Corp transistor Avl RFQ 2N4126 Freescale Semiconductor Inc transistor Avl RFQ 2N4126 National Semiconductor Corp transistor Avl RFQ 2N4126 Csr Industries Inc transistor Avl RFQ 2N4126 Microsemi Ppc Inc transistor Avl RFQ 2N4126 Solid State Devices Inc transistor Avl RFQ 26001 Biotek Instruments Inc Dba Biotek transistor Avl RFQ 01821211140002 Chauvin Arnoux transistor Avl RFQ
Characteristics Data of NSN 5961008280723MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.205 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ABKW OVERALL HEIGHT 0.210 INCHES MAXIMUM ABMK OVERALL WIDTH 0.165 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92 AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 2.00 MILLIAMPERES SOURCE CUTOFF CURRENT BLANK CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: PNP CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.205 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.210 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.165 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 2.00 MILLIAMPERES SOURCE CUTOFF CURRENT BLANK |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |