NSN 5961-00-828-1216 of Transistor - Parts Details
| Alternative NSN: 5961008281216 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008281216 |
| NCB Code: USA (00) |
| Manufacturers: Sprague Electric Co World Hqs , Freescale Semiconductor Inc , Veeco Instruments , Telcom Semiconductor Inc , Raytheon Aircraft |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TN128, TA1340, SS91, LBNL125, L110 under NSN 5961-00-828-1216 of Transistor manufactured by Sprague Electric Co World Hqs, Freescale Semiconductor Inc, Veeco Instruments, Telcom Semiconductor Inc, Raytheon Aircraft.
Federal Supply Class of NSN 5961-00-828-1216 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-828-1216, 5961008281216
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Part No Manufacturer Item Name QTY RFQ TN128 Sprague Electric Co World Hqs transistor Avl RFQ TA1340 Sprague Electric Co World Hqs transistor Avl RFQ SS91 Freescale Semiconductor Inc transistor Avl RFQ LBNL125 Veeco Instruments transistor Avl RFQ L110 Veeco Instruments transistor Avl RFQ FBNL110REVG Veeco Instruments transistor Avl RFQ FBNL110 Veeco Instruments transistor Avl RFQ CDR16109 Telcom Semiconductor Inc transistor Avl RFQ CDQ16169 Telcom Semiconductor Inc transistor Avl RFQ 5039-194 Raytheon Aircraft transistor Avl RFQ
Characteristics Data of NSN 5961008281216MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.188 INCHES NOMINAL ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.220 INCHES NOMINAL ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 0.10 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET CTRD POWER RATING PER CHARACTERISTIC 333.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.188 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.10 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET |
| CTRD | POWER RATING PER CHARACTERISTIC | 333.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |