NSN 5961-00-835-4755 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961008354755 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008354755 |
| NCB Code: USA (00) |
| Manufacturers: Selex Galileo Ltd , Nokia Siemens Networks Gmbh And Co , Barco Inc , Electronic Industries Association , Selex Elsag Ltd , Bei , Rohde And Schwarz Inc , Selex Communications Gmbh , Telefunken Gmbh , Eads Deutschland Gmbh Verteidig , Moseley Associates Inc , Adelco Elektronik Gmbh , Fairchild Semiconductor Corp , General Electric Company , General Semiconductor Inc , Lacon Electronic Gmbh , Aim Infrarot Module Gmbh , Burns Aerospace Corp , International Diode Corp , Itt Semiconductors Division , Microsemi Corporation , Motorola Solutions Inc Us Fe , Amperex Electronic Corp , Ampex Data Systems Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers XR1031, V22916-X1-A322, V131643, RELEASE4443, CS102005-2 under NSN 5961-00-835-4755 of Semiconductor Device Diode manufactured by Selex Galileo Ltd, Nokia Siemens Networks Gmbh And Co, Barco Inc, Electronic Industries Association, Selex Elsag Ltd.
Federal Supply Class of NSN 5961-00-835-4755 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-835-4755, 5961008354755
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Part No Manufacturer Item Name QTY RFQ XR1031 Selex Galileo Ltd semiconductor device diode Avl RFQ V22916-X1-A322 Nokia Siemens Networks Gmbh And Co semiconductor device diode Avl RFQ V131643 Barco Inc semiconductor device diode Avl RFQ RELEASE4443 Electronic Industries Association semiconductor device diode Avl RFQ CS102005-2 Selex Elsag Ltd semiconductor device diode Avl RFQ CR0150 Bei semiconductor device diode Avl RFQ AD0120723 Rohde And Schwarz Inc semiconductor device diode Avl RFQ 6L.5532.232.00-008358 Selex Communications Gmbh semiconductor device diode Avl RFQ 5L.5532.101.47 Telefunken Gmbh semiconductor device diode Avl RFQ 5L.5532.101.47 Eads Deutschland Gmbh Verteidig semiconductor device diode Avl RFQ 2744-3600137 Moseley Associates Inc semiconductor device diode Avl RFQ 1N4151A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4151 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 1N4151 General Electric Company semiconductor device diode Avl RFQ 1N4151 General Semiconductor Inc semiconductor device diode Avl RFQ 1N4151 Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N4151 Aim Infrarot Module Gmbh semiconductor device diode Avl RFQ 1N4151 Burns Aerospace Corp semiconductor device diode Avl RFQ 1N4151 Electronic Industries Association semiconductor device diode Avl RFQ 1N4151 International Diode Corp semiconductor device diode Avl RFQ 1N4151 Itt Semiconductors Division semiconductor device diode Avl RFQ 1N4151 Microsemi Corporation semiconductor device diode Avl RFQ 1N4151 Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N4151 Motorola Solutions Inc Us Fe semiconductor device diode Avl RFQ 1N4151 Amperex Electronic Corp semiconductor device diode Avl RFQ 013-777 Ampex Data Systems Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961008354755MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE4443 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 75.0 MAXIMUM REVERSE VOLTAGE, PEAK TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE4443 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |