NSN 5961-00-848-2359 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961008482359 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008482359 |
| NCB Code: USA (00) |
| Manufacturers: Allied Signal Inc , Raytheon Aircraft , General Semiconductor Inc , Trw Electronic Components Division , Gilbert Engineering Co Inc Incon , Honeywell International Inc , Itt Semiconductors Division , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 819782-26, 615007-2, 468169-5, 1N649 under NSN 5961-00-848-2359 of Semiconductor Device Diode manufactured by Allied Signal Inc, Raytheon Aircraft, General Semiconductor Inc, Trw Electronic Components Division, Gilbert Engineering Co Inc Incon.
Federal Supply Class of NSN 5961-00-848-2359 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-848-2359, 5961008482359
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Part No Manufacturer Item Name QTY RFQ 819782-26 Allied Signal Inc semiconductor device diode Avl RFQ 615007-2 Raytheon Aircraft semiconductor device diode Avl RFQ 468169-5 General Semiconductor Inc semiconductor device diode Avl RFQ 468169-5 Trw Electronic Components Division semiconductor device diode Avl RFQ 468169-5 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 468169-5 Honeywell International Inc semiconductor device diode Avl RFQ 468169-5 Itt Semiconductors Division semiconductor device diode Avl RFQ 468169-5 Texas Instrument Inc semiconductor device diode Avl RFQ 1N649 Texas Instrument Inc semiconductor device diode Avl RFQ 1N649 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N649 Itt Semiconductors Division semiconductor device diode Avl RFQ 1N649 General Semiconductor Inc semiconductor device diode Avl RFQ 1N649 Trw Electronic Components Division semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961008482359MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 600.0 MAXIMUM NOMINAL REGULATOR VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 0.40 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE CTRD POWER RATING PER CHARACTERISTIC 0.6 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.40 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
| CTRD | POWER RATING PER CHARACTERISTIC | 0.6 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |