NSN 5961-00-883-8906 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961008838906 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008838906 |
| NCB Code: USA (00) |
| Manufacturers: Thales Nederland , Alcatel Lucent , International Rectifier Corporation , Hollingsworth John R Co , Adelco Elektronik Gmbh , Texas Instrument Inc , Bogue Electric Manufacturing Co , Ge Aviation Systems Llc , Nai Technologies Inc , Thales Communications Inc , Inspektorat Wsparcia Sil Zbrojnych , Raytheon Aircraft , Rockwell Collins Inc , General Motors Corp , E2v Inc , Ward Leonard Electric , Basler Electric Company , Electronic Industries Association |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VBE890-1N3016B, RZ6-8, MZ6-8V01, JHP111-131, JAN1N3016BA under NSN 5961-00-883-8906 of Semiconductor Device Diode manufactured by Thales Nederland, Alcatel Lucent, International Rectifier Corporation, Hollingsworth John R Co, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-883-8906 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-883-8906, 5961008838906
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Part No Manufacturer Item Name QTY RFQ VBE890-1N3016B Thales Nederland semiconductor device diode Avl RFQ RZ6-8 Alcatel Lucent semiconductor device diode Avl RFQ MZ6-8V01 International Rectifier Corporation semiconductor device diode Avl RFQ JHP111-131 Hollingsworth John R Co semiconductor device diode Avl RFQ JAN1N3016BA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ JAN1N3016B Texas Instrument Inc semiconductor device diode Avl RFQ D17259-3 Bogue Electric Manufacturing Co semiconductor device diode Avl RFQ A15768-1 Ge Aviation Systems Llc semiconductor device diode Avl RFQ 883386 Nai Technologies Inc semiconductor device diode Avl RFQ 848117-0001 Thales Communications Inc semiconductor device diode Avl RFQ 5961PL1385065 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 4178600-83 Raytheon Aircraft semiconductor device diode Avl RFQ 40-666-3498-01U Ge Aviation Systems Llc semiconductor device diode Avl RFQ 353-3121-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-3046-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 352250010077 Thales Nederland semiconductor device diode Avl RFQ 3191924 General Motors Corp semiconductor device diode Avl RFQ 1N9578 E2v Inc semiconductor device diode Avl RFQ 1N3016B Ward Leonard Electric semiconductor device diode Avl RFQ 1N3016B General Motors Corp semiconductor device diode Avl RFQ 04938 Basler Electric Company semiconductor device diode Avl RFQ 04938 Electronic Industries Association semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961008838906MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE CATHODE AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 37.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC AND 140.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.350 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 37.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC AND 140.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |