NSN 5961-00-883-8950 of Transistor - Parts Details
Alternative NSN: 5961008838950 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 008838950 |
NCB Code: USA (00) |
Manufacturers: Raytheon Aircraft , Adelco Elektronik Gmbh , Lacon Electronic Gmbh , Telcom Semiconductor Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 531114-1, 2N3823A, 2N3823 under NSN 5961-00-883-8950 of Transistor manufactured by Raytheon Aircraft, Adelco Elektronik Gmbh, Lacon Electronic Gmbh, Telcom Semiconductor Inc.
Federal Supply Class of NSN 5961-00-883-8950 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-883-8950, 5961008838950
Characteristics Data of NSN 5961008838950MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |